A relaxation-time based MOSFET model for HF amplifier design

Author

El-Sherif, A.Y. ; Ashley, K.L.

Author_Institution

Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA

Volume

2

fYear

1999

fDate

1999

Firstpage

847

Abstract

The relaxation time of a physically based non-quasi-static (NQS) MOSFET model is investigated with emphasis on the empirical approach used in the BSIM3v3 NQS model. The 50-Ω S parameters of a 1.0-μm RF MOSFET are determined using our model in SPICE and compared to those obtained experimentally. A high-frequency OTA is designed and realized in a modern RF CMOS technology. The circuit is then analyzed and simulated to study the validity of the HF performance of our model in contrast to the available BSIM3v3 NQS and QS MOSFET models. Our NQS model has provided realistic simulation results, which meet our expectations based on analysis and theory

Keywords

CMOS analogue integrated circuits; MOSFET; S-parameters; SPICE; UHF field effect transistors; UHF integrated circuits; circuit CAD; integrated circuit design; operational amplifiers; semiconductor device models; 0.1 micron; CAD model; HF amplifier design; RF CMOS technology; RF MOSFET; S-parameters; SPICE; high-frequency OTA design; nonquasi-static MOSFET model; relaxation-time based MOSFET model; Analytical models; CMOS technology; Circuit simulation; Hafnium; MOSFET circuits; Radio frequency; Radiofrequency amplifiers; SPICE; Scattering parameters; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1999. 42nd Midwest Symposium on

Conference_Location

Las Cruces, NM

Print_ISBN

0-7803-5491-5

Type

conf

DOI

10.1109/MWSCAS.1999.867767

Filename

867767