• DocumentCode
    2405791
  • Title

    A high performance double-gate SOI MOSFET using lateral solid phase epitaxy

  • Author

    Liu, Haitao ; Xiong, Zhibin ; Sin, Johnny K O ; Xuan, Peiqi ; Bokor, Jeffrey

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Hong Kong Univ. of Sci. & Technol., China
  • fYear
    2002
  • fDate
    7-10 Oct 2002
  • Firstpage
    28
  • Lastpage
    29
  • Abstract
    We fabricate a double-gate SOI MOSFET using lateral solid phase epitaxy with high dose Si and Ge ion implantation. Device characterization showed that the double-gate MOSFET has superior performance as compared to the single-gate SOI MOSFET in terms of current drive, subthreshold slope, and Vt roll-off. The effective electron mobility of the LSPE crystallized layer is only 17% lower than that of commercial SOI wafers.
  • Keywords
    MOSFET; electron mobility; ion implantation; semiconductor device measurement; silicon-on-insulator; solid phase epitaxial growth; Ge; LSPE crystallized layer; Si; Vt roll-off; current drive; device characterization; double-gate SOI MOSFET; effective electron mobility; lateral solid phase epitaxy; subthreshold slope; Charge carrier mobility; Epitaxial growth; Ion implantation; MOSFETs; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, IEEE International 2002
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.2002.1044403
  • Filename
    1044403
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2405791