Title :
A high performance double-gate SOI MOSFET using lateral solid phase epitaxy
Author :
Liu, Haitao ; Xiong, Zhibin ; Sin, Johnny K O ; Xuan, Peiqi ; Bokor, Jeffrey
Author_Institution :
Dept. of Electron. & Electr. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
We fabricate a double-gate SOI MOSFET using lateral solid phase epitaxy with high dose Si and Ge ion implantation. Device characterization showed that the double-gate MOSFET has superior performance as compared to the single-gate SOI MOSFET in terms of current drive, subthreshold slope, and Vt roll-off. The effective electron mobility of the LSPE crystallized layer is only 17% lower than that of commercial SOI wafers.
Keywords :
MOSFET; electron mobility; ion implantation; semiconductor device measurement; silicon-on-insulator; solid phase epitaxial growth; Ge; LSPE crystallized layer; Si; Vt roll-off; current drive; device characterization; double-gate SOI MOSFET; effective electron mobility; lateral solid phase epitaxy; subthreshold slope; Charge carrier mobility; Epitaxial growth; Ion implantation; MOSFETs; Silicon on insulator technology;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044403
