A comparative study of threshold variations in symmetric and asymmetric undoped double-gate MOSFETs

Author

Chen, Qiang ; Meindl, James D.

Author_Institution

Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2002

fDate

7-10 Oct 2002

Firstpage

30

Lastpage

31

Abstract

For the purpose of giga-scale integration with double-gate (DG) MOSFET technology, it is imperative to consider parameter variations. In this paper, analytical long-channel and short-channel threshold voltage (V_TH) models for undoped asymmetric DG (ADG) MOSFETs are developed to reveal V_TH dependencies on device dimensions. Using the quantitative scaling theory, V_TH variations of ADG MOSFETs are then comprehensively investigated and compared to those of symmetric DG (SDG) MOSFETs recently studied by Chen (2002). ADG MOSFETs with p+/n+ poly or equivalent gates are used for case studies. It is found that threshold variations in nearly ideal, long-channel ADG devices are 10× as large as those in SDG devices.

Keywords

MOSFET; semiconductor device models; ADG MOSFET; DG MOSFET technology; SDG MOSFETs; asymmetric undoped double-gate MOSFETs; giga-scale integration; long-channel threshold voltage model; parameter variations; quantitative scaling theory; short-channel threshold voltage models; symmetric undoped double-gate MOSFETs; threshold variations; MOSFETs; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, IEEE International 2002

Print_ISBN

0-7803-7439-8

Type

conf

DOI

10.1109/SOI.2002.1044404

Filename

1044404