DocumentCode :
2405877
Title :
Model of electron field emission from Si through SiO2
Author :
Filip, Valeriu ; Nicolaescu, D. ; Okuyama, F. ; Itoh, J.
Author_Institution :
Dept. of Environ. Technol., Nagoya Inst. of Technol., Japan
Volume :
2
fYear :
1998
fDate :
6-10 Oct 1998
Firstpage :
645
Abstract :
The field electron emission from Si occurring through a SiO2 layer is considered. The applied electric field may produce electron accumulations near the emitting site and a reduction of the effective emitting surface area. The effect is stimulated by the oxide thickness increase
Keywords :
electron field emission; elemental semiconductors; semiconductor-insulator boundaries; silicon; silicon compounds; Si; Si-SiO2; SiO2 layer; electron field emission; model; semiconductor-oxide interface; Boundary conditions; Effective mass; Electron emission; Impedance; Laboratories; Physics; Resonance; Silicon; Thickness control; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
Type :
conf
DOI :
10.1109/SMICND.1998.733833
Filename :
733833
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2405877
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