Title :
Impact of gate tunneling on the nature of the charge dump current in 100nm PDSOI technology
Author :
Sinha, Shankar ; Chiang, Meng-Hsueh ; Pelella, Mario M.
Author_Institution :
AMD, Sunnyvale, CA, USA
Abstract :
We have shown that not only recombination lifetime, but also gate tunneling is an important component in determining the steady-state body potential in scaled PDSOI MOSFETs. Both elements affect the lateral bipolar induced charge dump current during pass gate transient operation. Increase in the gate tunneling current and reduction of the recombination lifetime have resulted in the displacement current from the drain and gate capacitances to be the dominant component of the charge dump current.
Keywords :
MOSFET; carrier lifetime; electron-hole recombination; elemental semiconductors; semiconductor device measurement; semiconductor device models; silicon; silicon-on-insulator; tunnelling; 100 nm; PDSOI technology; Si-SiO2; charge dump current; displacement current; drain capacitances; gate capacitances; gate tunneling; gate tunneling current; lateral bipolar induced charge dump current; pass gate transient operation; recombination lifetime; scaled PDSOI MOSFETs; steady-state body potential; Charge carrier lifetime; MOSFETs; Semiconductor device modeling; Silicon; Silicon on insulator technology; Tunneling;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044408
