DocumentCode
2406060
Title
A high-voltage lateral IGBT with significantly improved on-state characteristics on SOI for an advanced PDP scan driver IC
Author
Sumida, H. ; Hirabayashi, A. ; Kobayashi, H.
Author_Institution
Fuji Electr. Co. Ltd., Nagano, Japan
fYear
2002
fDate
7-10 Oct 2002
Firstpage
64
Lastpage
65
Abstract
The authors have attempted to develop a second generation LIGBT with significantly improved on-state characteristics compared against an existing LIGBT. The paper shows the characteristics of the developed 2nd generation LIGBT and introduces a new PDP scan driver IC fabricated by using the 2nd generation LIGBT.
Keywords
bipolar integrated circuits; driver circuits; elemental semiconductors; flat panel displays; insulated gate bipolar transistors; plasma displays; power bipolar transistors; power integrated circuits; silicon; silicon-on-insulator; 2nd generation LIGBT; SOI; Si-SiO2; advanced PDP scan driver IC; high-voltage lateral IGBT; on-state characteristics; second generation LIGBT; Bipolar integrated circuits; Driver circuits; Flat panel displays; Insulated gate bipolar transistors; Power bipolar transistors; Power integrated circuits; Silicon; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, IEEE International 2002
Print_ISBN
0-7803-7439-8
Type
conf
DOI
10.1109/SOI.2002.1044418
Filename
1044418
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