Title :
2nd- and 4th-order ΣΔ modulators fabricated in 3.3 V 0.5 μm SOS-CMOS for high-temperature applications
Author :
Ericson, M.N. ; Rochelle, J.M. ; Bobrek, M. ; Britton, C.L. ; Bobrek, A. ; Blalock, B.J. ; Schultz, R. ; Moore, J.A.
Author_Institution :
Oak Ridge Nat. Lab., TN, USA
Abstract :
A ΣΔ modulator fabricated in 0.5μm SOS-CMOS is reported. The design incorporates two 2nd-order loops allowing reconfigurability as either a 2nd-order single loop or a 4th-order 2-2 cascade. Test results of both modulator configurations over a temperature range of 25°C-200°C are presented. The modulator achieves an effective resolution of 15.5 bits at 25°C and 13.5 bits at 200°C (both at 2KS/s). Design details pertaining to topological selection and device sizing is presented with an emphasis on temperature tolerance. Results of modulator noise analysis is presented along with techniques for improving the modulator noise performance. This paper reports the first 4th-order ΣΔ modulator fabricated in an SOI/SOS process.
Keywords :
CMOS integrated circuits; high-temperature electronics; integrated circuit noise; sigma-delta modulation; silicon-on-insulator; ΣΔ modulators; 0.5 micron; 25 to 200 degC; 3.3 V; SOI/SOS process; SOS-CMOS; Si; device sizing; high-temperature applications; modulator configurations; modulator noise analysis; modulator noise performance; reconfigurability; resolution; temperature tolerance; topological selection; CMOS integrated circuits; Integrated circuit noise; Sigma-delta modulation; Silicon on insulator technology;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044424
