Title :
Harmonic distortion due to narrow width effects in deep sub-micron SOI-CMOS device for analog-RF applications
Author :
Lee, Hyeokjae ; Chun, Kwun-Soo ; Yi, Jeong Hyong ; Lee, Jong Ho ; Park, Young June ; Min, Hong Shick
Author_Institution :
90-nm Device Design, Chartered Semicond. Manuf., Singapore, Singapore
Abstract :
The authors have investigated the reason for low-noise frequency degradation, frequency dispersion, and harmonic distortion in narrow width SOI MOSFETs with STI. As the channel width decreases, low-frequency noise characteristics, frequency dispersion and harmonic distortion deteriorate due to the larger influence of the interface state which is caused by interface roughness. They have also analyzed the unit circuits performance of VCO, RO, and single MOSFET amplifiers.
Keywords :
CMOS analogue integrated circuits; MOSFET; harmonic distortion; integrated circuit noise; interface roughness; interface states; isolation technology; semiconductor device noise; silicon-on-insulator; voltage-controlled oscillators; RO; SOI MOSFETs; STI; VCO; analog-RF applications; channel width; deep sub-micron SOI-CMOS device; frequency dispersion; harmonic distortion; interface roughness; interface state; low-noise frequency degradation; narrow width effects; single MOSFET amplifier; CMOS analog integrated circuits; Harmonic distortion; Integrated circuit noise; Interface phenomena; Isolation technology; MOSFETs; Semiconductor device noise; Silicon on insulator technology; Voltage controlled oscillators;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044427
