DocumentCode
2406255
Title
New energy recovery snubber configurations for IGBT inverters
Author
He, X. ; Williams, B.W. ; Finney, S.J. ; Qian, Z.
Author_Institution
Zhejiang Univ., China
fYear
1996
fDate
23-25 Sept. 1996
Firstpage
54
Lastpage
59
Abstract
New inductive turn-on snubber energy recovery configurations for high power inverters using insulated gate bipolar transistors (IGBT) are proposed. Each circuit incorporates a soft-clamping circuit to limit main switch over-shoot voltage at turn-off. The energy trapped in the snubber is passively recovered into the DC supply, and the peak switch current is low. Simulations and experimentations show that presented configurations are suitable for use in high power IGBT inverters.
Keywords
insulated gate bipolar transistors; invertors; snubbers; DC supply; IGBT inverters; energy recovery snubber configurations; high power inverters; insulated gate bipolar transistors; main switch over-shoot voltage; peak switch current; soft-clamping circuit;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Variable Speed Drives, 1996. Sixth International Conference on (Conf. Publ. No. 429)
ISSN
0537-9989
Print_ISBN
0-85296-665-2
Type
conf
DOI
10.1049/cp:19960887
Filename
708301
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