Novel SOI-like structures for improved thermal dissipation

An SOI-like structure with adequate buried insulator replacing the BOX is extremely attractive for improved thermal dissipation. The resulting material is still SOI-like: thin Si film, high-k dielectric, Si substrate, and can be synthesized by adapting the current bonding techniques. The argument in favor of high-k dielectrics is that they will be used as gate insulators anyway, and high-k technology is being optimized; the whole process is simplified by considering ´symmetrical´ oxides. The approach is illustrated with a simple thermal mode, which is validated by self-consistent 2D numerical simulations.