Hot-carrier-induced degradation on 0.1 μm SOI CMOSFET

For BC-SOI nMOSFET, higher valence-band electron tunneling leading to maximum hot-carrier-induced I_Dsat degradation on V_G=V_D. But for FB-SOI nMOSFET, initial I_Dsat degradation is enhanced by PBT when V_G∼V_T. The maximum I_Dsat degradation occurs at V_G=V_D due to electron tunneling. FB-SOI devices were inversely temperature-dependent compared to BC-SOI devices. For pMOSFET, the impact ionization was not obvious due to lower channel hole mobility, thus the maximum I_Dsat degradation occurred for V_G=V_D for both SOI pMOSFETs.