A highly efficient Q-band MMIC 2.8 Watt output power amplifier based on 0.15μm InGaAs/GaAs pHEMT process technology

Author

Aust, M.V. ; Sharma, A.K. ; Fordham, O. ; Grundbacher, R. ; To, R. ; Tsai, R. ; Lai, R.

Author_Institution

Northrop Grumman, Redondo Beach, CA, USA

fYear

2005

fDate

30 Oct.-2 Nov. 2005

Abstract

A highly efficient and high power monolithic power amplifier operating at Q-band is presented utilizing 0.15μm pseudomorphic InGaAs/GaAs HEMT production process on 2-mil thick substrate. Over 42 to 46GHz frequency range, the amplifier demonstrated maximum power of 2.8 watts (34.5 dBm) and power-added-efficiency of 23 to 26% when operated at 5 volts and 250ma/mm. The amplifier attained maximum PAE of 24 to 29% and power of 33.6 to 34dBm when it is biased at 5 volts and 125ma/mm. At these power levels and power-added efficiencies, the amplifier exhibited power densities in excess of 430mW/mm. With device periphery ratio of 1:2.857, effective phase compensation of the input feed network, and low loss output combining network, the power amplifier has been able to attain state-of-the-art efficiency and power performance.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium arsenide; gallium compounds; indium compounds; power integrated circuits; 0.15 micron; 2 mil; 2.8 W; 42 to 46 GHz; 5 V; InGaAs-GaAs; Q-band MMIC power amplifier; high power monolithic power amplifier; input feed network; low loss output combining network; pHEMT process technology; phase compensation; pseudomorphic HEMT process; Frequency; Gallium arsenide; HEMTs; High power amplifiers; Indium gallium arsenide; MMICs; PHEMTs; Power amplifiers; Power generation; Production;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE

Print_ISBN

0-7803-9250-7

Type

conf

DOI

10.1109/CSICS.2005.1531821

Filename

1531821