Design, performance and application of high voltage GaAs FETs

Author

Miller, Monte

Author_Institution

Freescale Semicond., Tempe, AZ, USA

fYear

2005

fDate

30 Oct.-2 Nov. 2005

Abstract

Since the early 1970s, power GaAs FETs have seen wide spread usage in the vast majority of microwave communication systems. Until recently, most of these devices operated at drain voltages ranging from 8-12 Volts. Advances in process and epitaxial technology have enabled the operating voltage to be pushed to 26 Volts. This permits much higher power densities, which simplifies the design of high power discrete transistors. These new high voltage GaAs FETs now compete with LDMOS for cellular infrastructure and WiMAX (801.16) applications. This paper reviews the state of the art for high voltage FET technologies in terms of design, process technology and application.

Keywords

III-V semiconductors; gallium arsenide; microwave field effect transistors; microwave power transistors; power field effect transistors; 26 V; 8 to 12 V; GaAs; WiMAX technology; high power discrete transistors; high voltage FET devices; microwave communication systems; Breakdown voltage; Digital modulation; Electric breakdown; Gallium arsenide; Microwave FETs; Microwave communication; Microwave transistors; Numerical simulation; Process design; WiMAX;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE

Print_ISBN

0-7803-9250-7

Type

conf

DOI

10.1109/CSICS.2005.1531825

Filename

1531825