Title :
Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers
Author :
Hossain, N. ; Hild, K. ; Jin, S.R. ; Sweeney, S.J. ; Yu, S-Q ; Johnson, S.R. ; Ding, D. ; Zhang, Y-H
Author_Institution :
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
Abstract :
We investigate the temperature and pressure dependence of carrier recombination processes occurring in various GaAsSb/GaAs QW laser structures grown under similar growth conditions. Thermally activated carrier leakage via defects is found to be very sensitive to the strain induced interface imperfections. Nonradiative recombination is found to be sensitive to the number of QWs. A strain compensated MQW structure leads to a reduced contribution of non-radiative recombination to the threshold current density (Jth) and a high characteristic temperature (T0) of 73K at room temperature.
Keywords :
III-V semiconductors; current density; defect states; electron-hole recombination; gallium arsenide; leakage currents; nonradiative transitions; quantum well lasers; stress effects; GaAsSb-GaAs; MQW lasers; carrier recombination; defect states; nonradiative recombination; strain compensated MQW structure; strain induced interface imperfection; temperature 293 K to 298 K; temperature 73 K; thermally activated carrier leakage; threshold current density; Gallium arsenide; Radiative recombination; Temperature dependence; Temperature measurement; USA Councils; Vertical cavity surface emitting lasers;
Conference_Titel :
Photonics Global Conference (PGC), 2010
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-9882-6
DOI :
10.1109/PGC.2010.5706061
