Title :
28V planar GaAs MESFETs for wireless base-station power amplifiers
Author :
Yang, B. ; Halder, S. ; Ye, P.D. ; Daum, G. ; Dai, W. ; Frei, M. ; Ng, K. ; Bude, J. ; Hwang, J. C M ; Wilk, G.
Author_Institution :
Agere Syst., Allentown, PA, USA
fDate :
30 Oct.-2 Nov. 2005
Abstract :
This paper reports DC and RF characteristics of a high-voltage planar GaAs MESFET. Its breakdown voltages are over 65V at off state (Vgs = -1.5V) and 30V at on state (Vgs = 0.5 V). Under 28 V drain bias and 1.9GHz input, the power density reaches 1.0 W/mm with greater than 14dB linear gain. The third-order intermodulation product is -34dBc with 1dB back off from 1dB gain compression. These results suggest that the planar GaAs MESFET may be used as high-power and high-linearity RF power amplifiers in wireless base stations. The planar structure also makes it highly suitable for low-cost mass production.
Keywords :
III-V semiconductors; gallium arsenide; power MESFET; power amplifiers; -1.5 V; 0.5 V; 1 dB; 1.9 GHz; 28 V; 30 V; GaAs; breakdown voltage; planar MESFET; third order intermodulation product; wireless base-station power amplifiers; FETs; Fabrication; Gallium arsenide; Gold; High power amplifiers; MESFETs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Substrates;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531827
