Title :
Reliability model for predicting long-term DC/RF performance in GaAs PHEMTs
Author :
Chou, Y.C. ; Leung, D. ; Kan, Q. ; Biedenbender, M. ; Eng, D. ; Lai, R. ; Block, T. ; Oki, A.
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA, USA
fDate :
30 Oct.-2 Nov. 2005
Abstract :
Based on a three-temperature elevated temperature lifetest, a reliability model was developed to predict the DC/RF performance in 0.15 μm GaAs PHEMTs during the mission. The reliability model was empirically derived based on the linear relationship of ΔIdss (%) versus √t, where t is the elapsed stress time , and Arrhenius model of slopes extracted from the experimental results of ΔIdss (%) versus √t of a three-temperature lifetest. The reliability allows the prediction of DC/RF performance in 0.15 μm GaAs PHEMTs by the end of life (EOL), which is crucial for the defense and space applications.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; life testing; semiconductor device models; semiconductor device reliability; semiconductor device testing; 0.15 micron; DC performance; GaAs; RF performance; pseudomorphic high electron mobility transistors; reliability model; temperature life test; Decision support systems; Gallium arsenide; MESFETs; PHEMTs; Predictive models; Radio frequency; Semiconductor devices; Space technology; Stress; Temperature;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531828
