Title :
Density gradient transport model for the simulations of ultrathin, ultrashort SOI under non-equilibrium conditions
Author :
Lyumkis, E. ; Mickevicius, R. ; Penzin, O. ; Polsky, B. ; El Sayed, K. ; Wettstein, A. ; Fichtner, W.
Author_Institution :
Integrated Syst. Eng. Inc, San Jose, CA, USA
Abstract :
We report the first results of numerical simulation of nanoscale SOI structures under highly non-equilibrium conditions. The simulations are performed with the Density Gradient (DG) transport model.
Keywords :
nanotechnology; semiconductor device models; silicon-on-insulator; density gradient transport model; fully depleted double gated SOI structures; highly nonequilibrium conditions; nanoscale SOI structures; numerical simulation; ultrathin ultrashort SOI; Nanotechnology; Semiconductor device modeling; Silicon on insulator technology;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044453
