SOI-Specific tri-state inverter and its application

The initial-cycle parasitic bipolar effect reduces the noise margin and degrades the performance of the floating body partially depleted silicon-on-insulator (PD/SOI) pass-transistor circuits. To solve the problem, the floating body charge monitor technique was proposed by Saccamango et al (2000) and Kuang et al (2001). In this paper, we show the limitations of the charge monitor technique and propose a new robust PD/SOI tri-state inverter.