Title :
Digital ICs for high data rate/high voltage swing applications in a production-near SiGe technology
Author :
Wurzer, Martin ; Knapp, Herbert ; Böck, Josef ; Meister, Thomas F.
Author_Institution :
Corporate Res., Infineon Technol., Munich, Germany
fDate :
30 Oct.-2 Nov. 2005
Abstract :
This paper reports on various digital ICs fabricated in a 0.35 μm/200GHz-fT production-near SiGe bipolar technology with a VCEO of 1.8 V. A 2:1 time-division multiplexer with high differential output voltage swing of 2×2 Vpp operating at a data rate of 40 Gb/s is described. The circuit shows rise and fall times of about 11 ps and consumes 1.65 W. Furthermore a 45 Gb/s D-type flip-flop with high input sensitivity and a power consumption of 0.55 W is presented. Additionally a high-speed 2:1 multiplexer capable of processing data rates higher than 80 Gb/s is reported. It consumes 0.75 W.
Keywords :
Ge-Si alloys; bipolar MIMIC; bipolar logic circuits; flip-flops; multiplexing equipment; semiconductor materials; 0.35 micron; 0.55 W; 0.75 W; 1.65 W; 1.8 V; 200 GHz; 40 Gbit/s; 45 Gbit/s; 80 Gbit/s; D-type flip-flops; SiGe; bipolar logic circuits; digital integrated circuits; time-division multiplexer; voltage swing; Cutoff frequency; Digital circuits; Driver circuits; Flip-flops; Germanium silicon alloys; Integrated circuit technology; Multiplexing; Paper technology; Silicon germanium; Voltage;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531832
