Title :
A 165-Gb/s 4:1 multiplexer in InP DHBT technology
Author :
Hallin, Joakim ; Kjellberg, Torgil ; Swahn, Thomas
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
30 Oct.-2 Nov. 2005
Abstract :
This paper presents a 4:1 multiplexer fabricated in InP DHBT technology. The multiplexer works up to 165 Gb/s. At 165 Gb/s, the chip operates at -3.2 V supply voltage and consumes 1.6 W. It is a half-rate multiplexer using a multi-phase clock architecture. The main design challenges were timing margins between clock and data.
Keywords :
III-V semiconductors; bipolar integrated circuits; clocks; high-speed integrated circuits; indium compounds; multiplexing equipment; -3.2 V; 1.6 W; 165 Gbit/s; InP; double heterojunction bipolar transistors; half-rate multiplexer; high-speed digital circuit; multiphase clock architecture; timing margins; Clocks; DH-HEMTs; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Latches; Microstrip; Microwave technology; Multiplexing; Voltage;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531833
