Title :
A complementary bipolar technology on SOI featuring 50 GHz NPN and 35 GHz PNP devices for high performance RF applications
Author :
Nigrin, S. ; Wilson, M.C. ; Thomas, S. ; Connor, S. ; Osborne, P.H.
Author_Institution :
Zarlink Semicond., Swindon, UK
Abstract :
A very high performance complementary silicon bipolar technology on SOI has been developed. The SOI substrate added an extra degree of freedom for optimising the layout and rf performance of both NPN and PNP bipolar transistors.
Keywords :
bipolar transistors; silicon-on-insulator; 35 GHz; 50 GHz; NPN transistors; PNP transistors; RF performance; SOI substrate; high performance complementary bipolar technology; Bipolar transistors; Silicon on insulator technology;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044457
