Title :
Influence of HALO implantation on analog performance and comparison between bulk, partially-depleted and fully-depleted MOSFETs
Author :
Vancaillie, L. ; Kilchytska, V. ; Levacq, D. ; Adriaensen, Steven ; van Meer, H. ; De Meyer, K. ; Torrese, G. ; Raskin, Jean-Pierre ; Flandre, Denis
Author_Institution :
Lab. de Microelectron., Univ. Catholique de Louvain, Belgium
Abstract :
The influence of HALO implantation on analog device characteristics has been studied and compared for bulk, PD and FD SOI MOSFETs. It has been shown that whereas HALO implantation is needed for base-band applications preferably using longer channel, it has a detrimental effect for high-speed applications using minimum channel length transistors in strong inversion.
Keywords :
MOSFET; ion implantation; silicon-on-insulator; HALO implantation; analog performance; base-band applications; bulk MOSFET; channel lengths; fully-depleted MOSFET; inversion regimes; kink effects; partially-depleted MOSFET; Ion implantation; MOSFETs; Silicon on insulator technology;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044459
