Title :
GaAs multichip packaging using the selectively oxidized porous silicon (SOPS) substrate
Author :
Nam, Choong-Mo ; Jung, In-Ho ; Lee, Jong-Su ; Cho, Yong-Ho ; Kwon, Young-Se
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
The selectively oxidized porous silicon (SOPS) substrate consists of a silicon region for GaAs multichip packaging and an oxidized porous silicon (OPS) region for integration of passive elements such as inductors, MIM capacitors, resistors and coplanar waveguides. This structure provides many advantages at microwave frequencies, such as neglect of the semiconducting nature of silicon, low signal attenuation, high thermal conductivity, etc. Using the SOPS substrate and GaAs MMICs, L-band multichip packaging is implemented for two GaAs broadband amplifier, interconnection and transmitter systems
Keywords :
III-V semiconductors; MMIC; capacitors; gallium arsenide; inductors; integrated circuit interconnections; integrated circuit packaging; radio transmitters; resistors; thermal conductivity; wideband amplifiers; GaAs; GaAs MMICs; GaAs broadband amplifier interconnection; GaAs broadband amplifier/interconnection/transmitter systems; GaAs multichip packaging; L-band multichip packaging; MIM capacitors; SOPS substrate; Si; Si semiconducting nature; coplanar waveguides; inductors; interconnection; microwave frequencies; oxidized porous silicon region; passive element integration; resistors; selectively oxidized porous silicon substrate; signal attenuation; silicon region; thermal conductivity; transmitter; Coplanar waveguides; Gallium arsenide; Inductors; MIM capacitors; Resistors; Semiconductor device packaging; Semiconductor waveguides; Silicon; Substrates; Thermal conductivity;
Conference_Titel :
Electrical Performance of Electronic Packaging, 1998. IEEE 7th Topical Meeting on
Conference_Location :
West Point, NY
Print_ISBN :
0-7803-4965-2
DOI :
10.1109/EPEP.1998.733882
