Title :
ESD protection for pHEMT MMIC amplifiers
Author :
Beall, John M. ; Drando, Gergana I.
Author_Institution :
TriQuint Semicond., Richardson, TX, USA
fDate :
30 Oct.-2 Nov. 2005
Abstract :
In this paper, we discuss ESD characterization data on typical circuit elements used in GaAs pHEMT MMIC amplifiers. At microwave and mm-wave frequencies, basic circuit performance considerations drive design decisions. Human body model (HBM) data for basic circuit elements can provide guidance for layout and topology trade-offs to improve ESD performance. Critical circuit elements include a) closely spaced conductors, b) FETs, and c) capacitors. Construction details and spacing affect ESD performance of passive conductors. Total FET gate width is the critical factor for FETs. Area and dielectric thickness are critical for capacitors. On-chip diode networks can provide practical protection for gate bias terminals, easily exceeding 2000 V HBM.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; capacitors; electrostatic discharge; field effect MMIC; gallium arsenide; GaAs; MMIC amplifiers; electrostatic discharge protection; field effect transistor gate width; pseudomorphic high electron mobility transistors; Capacitors; Circuits; Conductors; Electrostatic discharge; FETs; Frequency; Gallium arsenide; MMICs; PHEMTs; Protection;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531839