Transient charge pumping for partially and fully depleted SOI MOSFETs

A new method to determine the interface trap density in both FD and PD SOI floating body devices is proposed. Majority carriers are removed from the floating body by applying pulses to the transistor´s gate and the change in linear drain current after each pulse is used to determine the interface trap density. The method´s unique feature is the possibility to characterize MOSFETs without a body contact.