• DocumentCode
    2406848
  • Title

    Transient charge pumping for partially and fully depleted SOI MOSFETs

  • Author

    Okhonin, S. ; Nagoga, M. ; Fazan, P.

  • Author_Institution
    LEG, Swiss Fed. Inst. of Technol., Lausanne, Switzerland
  • fYear
    2002
  • fDate
    7-10 Oct 2002
  • Firstpage
    171
  • Lastpage
    172
  • Abstract
    A new method to determine the interface trap density in both FD and PD SOI floating body devices is proposed. Majority carriers are removed from the floating body by applying pulses to the transistor´s gate and the change in linear drain current after each pulse is used to determine the interface trap density. The method´s unique feature is the possibility to characterize MOSFETs without a body contact.
  • Keywords
    MOSFET; interface states; silicon-on-insulator; MOSFETs; SOI; floating body devices; fully depleted devices; interface trap density; linear drain current; partially depleted devices; transient charge pumping; Interface phenomena; MOSFETs; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, IEEE International 2002
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.2002.1044463
  • Filename
    1044463
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2406848