DocumentCode
2406873
Title
A compact SPICE model of EEPROM cell studying the pulse ramp effect during erase operations
Author
Benzerti, W. ; Bouchakour, R. ; Seon, J.K. ; Mirabel, J.M. ; Boivin, Ph
Author_Institution
Ecole Nat. Superieure des Telecommun., Paris, France
Volume
2
fYear
1999
fDate
1999
Firstpage
1114
Abstract
This paper presents a compact SPICE model of an EEPROM cell. It is dedicated to the simulation of write/erase operations occurring in transient regime. Attention is focused on the effect of the variation of the pulse ramping on erase operations
Keywords
EPROM; SPICE; equivalent circuits; DC analysis; EEPROM cell; compact SPICE model; effective threshold voltage variation; equivalent circuit; erase operations; floating gate MOST; pulse ramp effect; transient regime; tunnel current evolution; Capacitance; Circuits; EPROM; MOSFETs; Nonvolatile memory; Production; Random access memory; SPICE; Statistics; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1999. 42nd Midwest Symposium on
Conference_Location
Las Cruces, NM
Print_ISBN
0-7803-5491-5
Type
conf
DOI
10.1109/MWSCAS.1999.867832
Filename
867832
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