Title :
Design methodology and applications of SiGe BiCMOS cascode opamps with up to 37-GHz unity gain bandwidth
Author :
Voinigescu, Sorin P. ; Beerkens, Rudy ; Dickson, Timothy O. ; Chalvatzis, Theodoros
Author_Institution :
Dept. of ECE, Toronto Univ., Ont., Canada
fDate :
30 Oct.-2 Nov. 2005
Abstract :
A new technique to design highly stable operational amplifiers with maximum unity gain bandwidth, UGB, is developed. It relies on biasing MOSFETs at the peak fMAX current density. Several opamps, based on MOS-HBT SiGe BiCMOS cascodes, were designed and fabricated with UGB as high as 37 GHz. This record bandwidth is achieved with active p-MOSFET loads. A 1.3-GHz bandpass filter was implemented using two fully differential opamps with common-mode-feedback.
Keywords :
BiCMOS analogue integrated circuits; band-pass filters; cascade networks; differential amplifiers; integrated circuit design; operational amplifiers; silicon compounds; 1.3 GHz; 37 GHz; BiCMOS cascode opamps; MOS-HBT BiCMOS cascodes; SiGe; active p-MOSFET load; bandpass filters; common-mode-feedback; differential opamps; operational amplifiers; unity-gain bandwidth; Bandwidth; BiCMOS integrated circuits; Current density; Design methodology; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; MOSFET circuits; Operational amplifiers; Silicon germanium;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531841
