Title :
Soft reverse recovery power diodes diffused with iridium
Author :
Benda, V. ; Cernik, M. ; Stepkova, D.
Author_Institution :
Czech Tech. Univ., Prague, Czech Republic
Abstract :
It is shown that iridium diffusion can be used as an alternative technique for fabrication of diodes with suitable carrier lifetime gradient in the base, resulting in relatively soft reverse recovery characteristics.
Keywords :
carrier lifetime; diffusion; elemental semiconductors; iridium; power semiconductor diodes; power semiconductor switches; recovery; semiconductor doping; silicon; Ir diffusion; Si:Ir; carrier lifetime gradient; forward voltage drop; high power fast switching; reverse recovery current; soft reverse recovery power diodes;
Conference_Titel :
Power Electronics and Variable Speed Drives, 1996. Sixth International Conference on (Conf. Publ. No. 429)
Print_ISBN :
0-85296-665-2
DOI :
10.1049/cp:19960889
