Title :
Impact of technology parameters on inverter delay of UTB-SOI CMOS
Author :
Schulz, Thomas ; Pacha, Christian ; Risch, Lothar
Author_Institution :
Corporate Res., Infineon Technol. AG, Munich, Germany
Abstract :
Ultra-thin-body silicon-on-insulator (UTB-SOI) is one of the most promising candidates for future CMOS technologies with minimum feature sizes below 50 nm. In this paper we analyse the impact of different parameters such as doping profile, gate work function and local interconnects on the inverter delay. For that purpose we have simulated fully-depleted (FD) SOI-MOSFETs with thin undoped silicon bodies using a coupled device and circuit simulation.
Keywords :
CMOS integrated circuits; MOSFET; doping profiles; integrated circuit interconnections; integrated circuit modelling; invertors; semiconductor device models; silicon-on-insulator; work function; UTB-SOI CMOS; coupled device-circuit simulation; doping profile; feature sizes; fully-depleted SOI-MOSFETs; gate work function; inverter delay; local interconnects; ultra-thin-body SOI; CMOS integrated circuits; Integrated circuit interconnections; Integrated circuit modeling; Inverters; MOSFETs; Semiconductor device modeling; Silicon on insulator technology; Work function;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044466
