Cross-talk suppression Faraday cage structure in silicon-on-insulator

Author

Stefanou, S. ; Hamel, J.S. ; Baine, P. ; Bain, M. ; Armstrong, B.M. ; Gamble, H.S. ; Kraft, M. ; Kemhadjian, H.A. ; Osman, K.

Author_Institution

Southampton Univ., UK

fYear

2002

fDate

7-10 Oct 2002

Firstpage

181

Lastpage

182

Abstract

Substrate crosstalk presents a fundamental limitation to further increases in integration of mixed signal RF telecommunication ICs. In this work, results of cross-talk suppression in ground plane SOI (GPSOI) are presented where the buried metal ground planes are combined with vertical metal-filled trenches to form a complete Faraday cage structure around the transmitter and receiver. Measurements indicate that cross-talk suppression is enhanced by 70 dB at 1 GHz.

Keywords

MOS integrated circuits; UHF integrated circuits; buried layers; crosstalk; elemental semiconductors; integrated circuit measurement; microwave integrated circuits; millimetre wave integrated circuits; mixed analogue-digital integrated circuits; silicon; silicon-on-insulator; 0.5 to 50 GHz; 70 dB; GPSOI; Si-SiO₂; buried metal ground planes; cross-talk suppression Faraday cage structure; ground plane SOI; receiver; silicon-on-insulator; substrate crosstalk; transmitter; vertical metal-filled trenches; Crosstalk; Integrated circuit measurements; MOS integrated circuits; Microwave integrated circuits; Millimeter wave integrated circuits; Mixed analog-digital integrated circuits; Silicon; Silicon on insulator technology; UHF integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, IEEE International 2002

Print_ISBN

0-7803-7439-8

Type

conf

DOI

10.1109/SOI.2002.1044468

Filename

1044468