Partial SOI/SON formation by He+ implantation and annealing

We fabricated partial SOI/SON structures by light-ion implantation (LII) technique. Compared with the patterned SIMOX, the LII technique causes less damage, and therefore can reduce defect density at the pattern edge of the partial SOI structure. Partial SON formed by LII shows further reduction in the defect density, probably because the stress induced by the SiO₂ formation is small. The SON surface is extremely smooth. Thus, the LII has great advantages for partial SOI/SON fabrication as a substrate for SOC.