A low power, high performance SiGe BiCMOS 802.1 6e dual conversion transceiver IC

Author

Locher, M. ; Kuenen, J. ; Daanen, A. ; Visser, H. ; Essink, B. ; Vervoort, P.P. ; Charlon, O. ; Landesman, A. ; Kohlschütter, U.

Author_Institution

NXP Semiconductors, Nijmegen

fYear

2007

fDate

25-29 March 2007

Firstpage

66

Lastpage

69

Abstract

This paper describes a low power, high performance double conversion WiBro/WiMAX 802.16e radio transceiver optimized for mobile applications and coexistence with on-board cellular and WLAN/Bluetooth systems. It is fabricated in a SiGe BiCMOS process and achieves a receiver NF of less than 2.5 dB at an operation frequency of 2.35 GHz. The transmit gain can be digitally tuned over a 75 dB range. The transceiver consumes 125/135 mA at a 2.8 V supply in OFDMA Rx/Tx modes respectively

Keywords

BiCMOS integrated circuits; Ge-Si alloys; OFDM modulation; UHF integrated circuits; WiMax; broadband networks; frequency division multiple access; radio access networks; transceivers; 125 to 135 mA; 2.35 GHz; 2.8 V; 802.16e; OFDMA Rx-Tx mode; SiGe; SiGe BiCMOS process; WLAN-Bluetooth system; WiBro-WiMAX; digital tuning; dual conversion transceiver IC; frequency division multiple access; mobile application; on-board cellular system; orthogonal frequency division multiplexing; Application specific integrated circuits; BiCMOS integrated circuits; Bluetooth; Germanium silicon alloys; Noise measurement; Radio transceivers; Receivers; Silicon germanium; WiMAX; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Mobile WiMAX Symposium, 2007. IEEE

Conference_Location

Orlando, FL

Print_ISBN

1-4244-0957-8

Type

conf

DOI

10.1109/WIMAX.2007.348701

Filename

4156097