Title :
Oxygen-related defects in silicon-on-insulator wafers probed monoenergetic positron beams
Author :
Uedono, A. ; Yamamoto, H. ; Nakano, A. ; Ogura, A. ; Ohdaira, T. ; Suzuki, R. ; Mikado, T.
Author_Institution :
Inst. of Appl. Phys., Univ. of Tsukuba, Ibaraki, Japan
Abstract :
Si-on-insulator (SOI) wafers fabricated by SIMOX and bond-and-etch-back technique were characterized by monoenergetic positron beams. Oxygen-related defects were found to be present in SOI layers, and the mean open volume of such defects in SIMOX wafers was estimated to be larger than that of a hexavacancy. The interaction between the defects in the SOI layers and hydrogen was also studied.
Keywords :
SIMOX; annealing; crystal defects; positron annihilation; O-related defects; SIMOX; SOI wafers; Si-SiO; annealing; bond-etch back technique; mean open volume; monoenergetic positron beams; positron annihilation; Annealing; Particle collisions; SIMOX;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044474
