Title :
Study of reverse dark current in silicon APD for PET application
Author :
Ning, Duan ; Liow, Tsung-Yang ; Lo, Guo-Qiang
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
This paper demonstrates silicon APD with low dark current for Positron emission tomography (PET) application. The origin of dark current has been studied by measuring dark current at different temperature and different bias. It is shown that dark current of the silicon APD originates from the field assisted band-trap-band tunneling.
Keywords :
avalanche photodiodes; biomedical electronics; dark conductivity; elemental semiconductors; positron emission tomography; silicon; tunnelling; PET Application; Si; field assisted band-trap-band tunneling; positron emission tomography; reverse dark current; silicon APD; Current measurement; Dark current; Electric fields; Fabrication; Positron emission tomography; Silicon; Temperature measurement;
Conference_Titel :
Photonics Global Conference (PGC), 2010
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-9882-6
DOI :
10.1109/PGC.2010.5706089
