Title :
Single-event upset in commercial silicon-on-insulator PowerPC microprocessors
Author :
Irom, F. ; Swift, G.M. ; Farmanesh, F.H. ; Johnston, A.H.
Author_Institution :
Jet Propulsion Lab., Pasadena, CA, USA
Abstract :
Single-event upset effects from heavy ions and protons are measured for Motorola and IBM silicon-on-insulator (SOT) microprocessors, and compared with results for similar devices with bulk substrates. The cross sections of the SOI processors are lower than their bulk counterparts, but the threshold is about the same, even though the charge collection depth is more than an order of magnitude smaller in the SOI devices.
Keywords :
elemental semiconductors; integrated circuit reliability; integrated circuit testing; ion beam effects; microprocessor chips; proton effects; radiation hardening (electronics); silicon; silicon-on-insulator; IBM microprocessors; Motorola microprocessors; SOI; Si-SiO2; bulk substrates; charge collection depth; commercial silicon-on-insulator PowerPC microprocessors; cross sections; heavy ions; protons; single-event upset; threshold; Integrated circuit reliability; Integrated circuit testing; Ion radiation effects; Microprocessors; Proton radiation effects; Radiation hardening; Silicon; Silicon on insulator technology;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044476
