Title :
Preparation of novel SiGe-free strained Si on insulator substrates
Author :
Langdo, T.A. ; Lochtefeld, A. ; Currie, M.T. ; Hammond, R. ; Yang, V.K. ; Carlin, J.A. ; Vineis, C.J. ; Braithwaite, G. ; Badawi, H. ; Bulsara, M.T. ; Fitzgerald, E.A.
Author_Institution :
AmberWave Syst. Corp., Salem, NH, USA
Abstract :
A novel SiGe-free SSOI substrate technology has been described. This method enables the fabrication of well controlled, epitaxially-defined, thin strained Si layers directly on insulator layers. Tensile strain levels of greater than 1% have been demonstrated in these structures, and are not diminished after thermal anneal cycles. The strain-inducing relaxed SiGe layer is absent from the final structure, eliminating some of the key problems inherent to other SSOI solutions.
Keywords :
Ge-Si alloys; Raman spectra; annealing; elemental semiconductors; internal stresses; semiconductor materials; silicon; silicon compounds; silicon-on-insulator; stress relaxation; transmission electron microscopy; Raman spectroscopy; SiGe-Si-SiO2; SiGe-free strained SOI substrate; XTEM; tensile strain; thermal anneal cycles; thin strained Si layers; Annealing; Electron microscopy; Germanium alloys; Raman scattering; Semiconductor materials; Silicon; Silicon alloys; Silicon compounds; Silicon on insulator technology; Stress;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044480
