Title :
Modeling and optimal design of a chemical vapor deposition reactor
Author :
Tran, Hien T. ; Scroggs, Jeffrey S.
Author_Institution :
Dept. of Math., North Carolina State Univ., Raleigh, NC, USA
Abstract :
The flow dynamics of a homogeneous gas inside a vertical, cylindrical reactor are modeled with a commercially available computational fluid dynamics code. The transport process in chemical vapor deposition are described using conservation of mass, momentum, energy, and mass transfer equations. Navier-Stokes equations for a Newtonian fluid and laminar flow are used to describe the momentum conservation. The buoyancy effect is included in the model through the gravitational term in the momentum equation. The thermal (Soret) effect is included in the model to account for binary diffusion in the presence of large temperature gradients typical of chemical vapor deposition (CVD) process. Results of a 2-D, steady, axisymmetrical flow are presented using a finite element method with non-uniform Cartesian meshes. The formulation of the optimal reactor design problem for CVD is discussed
Keywords :
Navier-Stokes equations; chemical vapour deposition; chemically reactive flow; finite element analysis; flow simulation; laminar flow; modelling; Navier-Stokes equations; Newtonian fluid; Soret diffusion; axisymmetrical flow; binary diffusion; buoyancy effect; chemical vapor deposition; chemical vapor deposition reactor; computational fluid dynamics code; energy; finite element method; flow dynamics; gravitational term; homogeneous gas; laminar flow; mass; mass transfer equations; modelling; momentum; nonuniform Cartesian meshes; optimal design; optimal reactor design problem; temperature gradients; thermal effect; transport process; Aerodynamics; Chemical vapor deposition; Computational fluid dynamics; Finite element methods; Fluid dynamics; Fluid flow; Fluid flow control; Inductors; Mathematical model; Navier-Stokes equations; Semiconductor films; Sputtering; Temperature; Thin film transistors;
Conference_Titel :
Decision and Control, 1992., Proceedings of the 31st IEEE Conference on
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-0872-7
DOI :
10.1109/CDC.1992.371223