Electrical & optical properties of Mg-doped narrow band-gap InSbN p-n junction

InSbN p-n junctions are fabricated by direct implantation of N⁺ and Mg⁺ into InSb wafers and their electrical and optical properties are characterized. It is found that high quality p-n junctions can be formed and they can absorb photons to form photocurrent. Furthermore, the peak and cut-off wavelengths absorbed can be controlled by monitoring the incorporated nitrogen and the measured peak wavelengths are consistent with the band gaps of the alloys calculated using a 10-band k·p model based on In-N bond.