Title :
Dilute nitride InSb1−xNx alloys for mid infrared detection
Author :
Lim, K.P. ; Pham, H.T. ; Yoon, S.F. ; Tan, K.H. ; Ngo, C.Y.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
InSb1-xNx alloys on GaAs substrates are prepared by molecular beam epitaxy and in-situ thermal annealed at different temperatures in Sb ambience. InSb1-xNx photoconductors operating near 10 μm at 77 K are realized. The amount of N incorporation in Sb lattice sites is found to be dependent on the annealing temperature. These findings will benefit those working on mid-infrared photodetectors.
Keywords :
III-V semiconductors; annealing; indium compounds; infrared detectors; molecular beam epitaxial growth; photoconducting materials; photodetectors; semiconductor growth; wide band gap semiconductors; GaAs; InSb1-xNx; annealing temperature; dilute nitride alloys; in-situ thermal annealing; mid infrared detection; mid-infrared photodetectors; molecular beam epitaxy; photoconductors; temperature 77 K; Annealing; Gallium arsenide; Metals; Molecular beam epitaxial growth; Photoconducting materials; Photonic band gap;
Conference_Titel :
Photonics Global Conference (PGC), 2010
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-9882-6
DOI :
10.1109/PGC.2010.5706131
