Title :
40 Gbps SiGe pattern generator IC with variable clock skew and output levels
Author :
Zahller, Matthew J. ; La Rue, George S.
Author_Institution :
Washington State Univ., Pullman, WA
Abstract :
A single-chip 40 Gbps pattern generator design in 0.18 mum SiGe BiCMOS technology is described. An on-chip 128times128 bit RAM with an access time of 3 ns stores the data pattern. A hybrid 128:1 CMOS/ECL multiplexer increases the output data rate from the RAM to 40 Gbps. The output driver is back terminated with 50 ohms and provides programmable levels in the range -2 V to 2 V into a 50 ohm load. The pattern dependent jitter is under 1 ps at all output levels. The clock can be delayed by a programmable number of clock cycles plus a vernier delay of up to 50 ps in 0.2 ps steps. Power dissipation is up to 550 mW depending on the output amplitude and termination voltage
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; integrated circuit design; logic design; random-access storage; -2 to 2 V; 0.18 micron; 128 bit; 3 ns; 50 ohm; BiCMOS technology; CMOS/ECL multiplexer; RAM; SiGe; clock skew; pattern dependent jitter; pattern generator integrated circuit; BiCMOS integrated circuits; CMOS technology; Clocks; Delay; Germanium silicon alloys; Jitter; Multiplexing; Power dissipation; Silicon germanium; Voltage;
Conference_Titel :
Microelectronics and Electron Devices, 2006. WMED '06. 2006 IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
1-4244-0374-X
DOI :
10.1109/WMED.2006.1678281