Propagation of UWB pulses on metal strips printed on semiconductor dielectrics

The interaction of ultra-wideband pulses propagating on a semiconductor substrate is analysed without solving the charge dynamic equations. This study demonstrates the systematic approach for selecting semiconductor parameters and their significance in the practical design of high speed microstrip interconnects. To our knowledge, this is the first time such a comprehensive and conceptual study of EMP interaction with semiconductor dielectrics has been performed. The comparison of waveforms on single and coupled lines elucidates the mechanisms of pulse distortion on semiconductor substrates. However, the realization of the dielectric relaxation is studied by changing the doping concentrations of the substrate. Moreover, the evolution of currents for different conductivities illustrates the realization of the doping concentration in a semiconductor. Furthermore, the study on layered substrates with different doping concentrations and relative permittivities demonstrates the fidelity of waveforms on the source line and significantly weak coupling to the victim line. This analysis is a first step towards the full-fledged self- consistent simulations of EMP interaction with the physical model of semiconductor devices. A 160 node Itanium II cluster processor has an average 5 hours simulation time in this work.