Title :
Time-dependent dielectric breakdown of a recessed channel DRAM access device
Author :
Owens, T. ; Hwang, D. ; Vaidyanathan, P. ; Parekh, K.
Author_Institution :
R&D Process Dev., Micron Technol., Inc., Boise, ID
Abstract :
A recessed access device (RAD) used in a DRAM cell has exhibited advantages over the conventional planar access device, including retention time improvement. However, worse time-dependent dielectric breakdown (TDDB) characteristics were observed for RAD. The degraded TDDB performance is primarily attributed to thinner oxide growth in the recess
Keywords :
DRAM chips; electric breakdown; integrated circuit reliability; DRAM cell; oxide reliability; recessed access device; time-dependent dielectric breakdown; Degradation; Dielectric breakdown; Electric breakdown; Electrodes; Leakage current; Random access memory; Research and development; Scalability; Stress; Voltage;
Conference_Titel :
Microelectronics and Electron Devices, 2006. WMED '06. 2006 IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
1-4244-0374-X
DOI :
10.1109/WMED.2006.1678293
