Application of focused ion beam for testing, repair and fabrication of metal and optical interconnections in wafer scale integration

Author

McDonald, J.F. ; Lin, H.T.

Author_Institution

Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

1989

fDate

3-5 Jan 1989

Firstpage

161

Lastpage

172

Abstract

Testing and repair methods using a focused ion beam (FIB) system are presented. An application of ion beam voltage contrast testing to the problem of checking line continuity and shorting is examined. A microfocused secondary ion mass spectrometer is used for verification of cuts produced from ion milling. The feasibility of using FIB to micromachine optical mirrors used in optical waveguides has been studied with very encouraging results. The versatility of FIB presents a unique opportunity for test and repair of wafer-scale metal wires as well as fabrication of microoptics for optical waveguides in a single high-yield processing step

Keywords

VLSI; integrated optoelectronics; ion beam applications; mirrors; secondary ion mass spectroscopy; cuts; focused ion beam; high-yield processing step; ion beam voltage contrast testing; ion milling; line continuity; metal wires; microfocused secondary ion mass spectrometer; microoptics; optical interconnections; optical mirrors; optical waveguides; repair; shorting; testing; wafer scale integration; Fabrication; Ion beams; Mass spectroscopy; Milling; Mirrors; Optical waveguides; Particle beam optics; System testing; Voltage; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Wafer Scale Integration, 1989. Proceedings., [1st] International Conference on

Conference_Location

San Francisco, CA

Print_ISBN

0-8186-9901-9

Type

conf

DOI

10.1109/WAFER.1989.47547

Filename

47547