Title :
Comparative study of TaN-TiN and TiN gate stacks for thermally stable PFETs
Author :
Ramaswamy, Nirmal ; McTeer, Allen ; Ananthan, Venkat ; Palaniappan, Nanda ; Owens, Tim ; Tang, Sanh ; Iyer, Ravi ; Wang, Shixin ; Mouli, Chandra
Author_Institution :
R&D Process Dev., Micron Technol. Inc., Boise, ID
Abstract :
Thermally stable TiN and TaN-TiN laminate metal gates for PFETs are demonstrated using a conventional CMOS process flow with SiON gate dielectric. TaN-TiN laminate gates show enhanced drives (ID), higher transconductance (GM), higher mobility (mu EFF , and reduced off current (IOFF) characteristics compared to TiN gates. The optimum thickness of TaN in the laminate stack is discussed. The as-deposited work function of the TaN-TiN laminate gate stack and TiN was found to be ~ 5.0eV
Keywords :
MOSFET; dielectric materials; silicon compounds; tantalum compounds; titanium compounds; work function; CMOS process flow; SiON; TaN-TiN; gate dielectric; gate stacks; laminate metal gate; laminate metal gates; metal nitride; thermally stable PFET; work function; Dielectrics; Electrodes; Inorganic materials; Laminates; Nonhomogeneous media; Optical films; Thermal stability; Tin; Voltage; X-ray scattering;
Conference_Titel :
Microelectronics and Electron Devices, 2006. WMED '06. 2006 IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
1-4244-0374-X
DOI :
10.1109/WMED.2006.1678306
