DocumentCode :
2408787
Title :
Self-Aligned Carbon Nanotubes for Field Emission Tip with Simple Process
Author :
Eom, Bose ; Han, Changho ; Kim, Hyeoncheol ; Yum, Minhyung ; Yang, Jihun ; Park, Chongyun ; Chun, Kukjin
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
fYear :
2006
fDate :
10-11 Oct. 2006
Firstpage :
497
Lastpage :
499
Abstract :
Carbon nanotubes (CNTs) is one of the most attractive materials for field emission tip. Because of its low threshold voltage and high current density. In this article we introduce a new simple process to fabricate self-aligned carbon nanotubes for field emission tip with simple process. We can make the less than 200nm diameter hole with our one mask like process by which carbon nanotubes will be self-aligned with the gate layer. And then carbon nanotubes will be catalytically grown in PECVD chamber.
Keywords :
carbon nanotubes; current density; field emission; nanotube devices; plasma CVD; PECVD chamber; current density; field emission tip; gate layer; self-aligned carbon nanotubes; threshold voltage; Buffer layers; Carbon nanotubes; Chemical lasers; Dielectrics; Electron beams; Lithography; Physics; Plasma applications; Plasma chemistry; Plasma properties; PECVD; carbon nanotubes; field emission tip; self-aligned;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Electronics, 2006. ICCE '06. First International Conference on
Conference_Location :
Hanoi
Print_ISBN :
1-4244-0568-8
Electronic_ISBN :
1-4244-0569-6
Type :
conf
DOI :
10.1109/CCE.2006.350878
Filename :
4156529
Link To Document :
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