Title :
Conductive Atomic Force Microscopy failure analysis for SOI devices
Author :
Soon-Hua, Lim ; Xinhua, Zheng ; Chea-Wei, Teo ; Narang, Vinod ; Hock, Teo Beng ; Chin, JM
Author_Institution :
Adv. Micro Devices Pte Ltd., Singapore
Abstract :
A FIB shorting technique to create a conducting path across the buried oxide to connect active silicon to silicon substrate is demonstrated to allow conductive atomic force microscopy (CAFM) failure analysis on SOI devices. CAFM is carried out at via and contact levels to provide current images that helped to localize the faulty node and also determine current-voltage characteristics at an area of interest.
Keywords :
atomic force microscopy; failure analysis; focused ion beam technology; integrated circuit testing; silicon-on-insulator; FIB shorting technique; SOI devices; buried oxide; conductive atomic force microscopy; failure analysis; focused ion beam shorting method; Atomic force microscopy; Contacts; Electron beams; Failure analysis; Ion beams; Optical microscopy; Scanning electron microscopy; Silicon on insulator technology; Substrates; Surface topography;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2039-1
Electronic_ISBN :
978-1-4244-2040-7
DOI :
10.1109/IPFA.2008.4588162
