IMC growth and DR4 open on TSOP package

Author

Caihong, Wu ; Fai, Lam Tim ; Xianzhong, Song ; Bin, Chen ; Mingxia, Sun ; Xiangru, Wang

Author_Institution

Spansion (China) Ltd., Suzhou

fYear

2008

fDate

7-11 July 2008

Firstpage

1

Lastpage

4

Abstract

One kind of TSOP package (Device 98M16 encapsulated by mold compound 7351LS) encountered serious open failure after Data Retention 4 test (DR4, 5000 hours baking at 150 degC) and the failure rate is almost 100%. But a similar package (Device 98R16 encapsulated by mold compound G700L) is normal after test. Failure analyses were done for the two packages. The results show that the wire bond IMC are different for failed package and good package. Kirkendall voids and cracks were found on the wire bond area for failed package. FEA simulation results show that the mold compound used in failed package induces high stress status in wire bond area and leads to the bad performance of the wire bond.

Keywords

alloys; electronics packaging; failure analysis; finite element analysis; lead bonding; materials testing; FEA simulation; Kirkendall cracks; Kirkendall voids; TSOP package; data retention 4 test; device 98M16 encapsulated; failed package; failure analysis; intermetallic compounds growth; mold compound 7351LS; mold compound G700L; open failure; temperature 150 C; time 5000 hour; wire bond; Bonding; Cooling; Failure analysis; Gold; Packaging; Shearing; Stress; Sun; Testing; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the

Conference_Location

Singapore

Print_ISBN

978-1-4244-2039-1

Electronic_ISBN

978-1-4244-2040-7

Type

conf

DOI

10.1109/IPFA.2008.4588170

Filename

4588170