A low voltage current reuse LNA in a 130nm CMOS technology for UWB applications

A resistive current reuse UWB LNA implemented in a 130 nm CMOS technology is here reported. Covering a 2 to 9 GHz band, the circuit provides an 11.5 dB gain for a 4.45 dB minimum noise figure. Across the frequency band of interest, the NF is kept below 9 dB. The broadband behaviour of the input stage allows achieving a very wide input matching. As well S₁₁ is lower than -12 dB from 1 to 14.8 GHz while bias current of reuse limits power consumption of the LNA core to 12 mA under 1.4 V supply voltage. The chip size is here 0.63 mm² including pads, thus depicting the lowest silicon area reported in the state of the art for such UWB LNA.