Title :
Stress-induced degradation in strain-engineered nMOSFETs
Author :
Maiti, T.K. ; Mahato, S.S. ; Bera, M.K. ; Sengupta, M. ; Chakraborty, P. ; Mahata, C. ; Chakraborty, A. ; Maiti, C.K.
Author_Institution :
Dept. of Electron.&ECE, Indian Inst. of Technol., Kharagpur
Abstract :
Effects of electrical stress on DC performance of strain-engineered nMOSFETs are investigated using simulation. The applicability of technology CAD (TCAD) for the prediction of MOSFET reliability is demonstrated.
Keywords :
MOSFET; semiconductor device reliability; technology CAD (electronics); MOSFET reliability; TCAD; electrical stress; stress induced degradation; CMOS technology; Capacitive sensors; Degradation; Hot carriers; Hydrogen; Integrated circuit technology; Kinetic theory; MOSFET circuits; Radio frequency; Stress;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2039-1
Electronic_ISBN :
978-1-4244-2040-7
DOI :
10.1109/IPFA.2008.4588185
