Title :
Reliability of ZrO2/GeOxNy stacked high-k dielectrics on Ge under dynamic and pulsed voltage stress
Author :
Mahata, C. ; Bera, M.K. ; Bose, P.K. ; Chakraborty, A. ; Sengupta, M. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & ECE, Indian Inst. of Technol. Kharagpur, Kharagpur
Abstract :
Charge trapping/detrapping in Al/ZrO2/GeOxNy/p-Ge MIS capacitors have been studied under dynamic voltage stresses of different amplitude and frequency in order to analyze the transient response and the degradation of the oxide as a function of the stress parameters. The current transients observed in dynamic voltage stresses have been interpreted in terms of the charging/discharging of interface and bulk traps. The evolution of the current during unipolar and bipolar voltage stresses shows the degradation being much faster at low frequencies than at high frequencies.
Keywords :
MIS capacitors; aluminium; germanium compounds; high-k dielectric thin films; semiconductor device reliability; transient response; zirconium compounds; Al-ZrO2-GeON-Ge; MIS capacitors; charge trapping; detrapping; dynamic voltage stress; pulsed voltage stress; semiconductor device reliability; stacked high-k dielectrics; transient response; Breakdown voltage; Capacitors; Current measurement; Degradation; Dielectric measurements; Frequency; Leakage current; Pulse measurements; Stress measurement; Substrates;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2039-1
Electronic_ISBN :
978-1-4244-2040-7
DOI :
10.1109/IPFA.2008.4588188
